{"id":6757,"date":"2022-04-03T21:52:13","date_gmt":"2022-04-03T18:52:13","guid":{"rendered":"https:\/\/www.weebit-nano.com\/?page_id=6757"},"modified":"2025-04-24T15:55:42","modified_gmt":"2025-04-24T12:55:42","slug":"reram-bitcell","status":"publish","type":"page","link":"https:\/\/www.weebit-nano.com\/technology\/reram-bitcell\/","title":{"rendered":"Meet the ReRAM Bitcell"},"content":{"rendered":"\t\t<div data-elementor-type=\"wp-page\" data-elementor-id=\"6757\" class=\"elementor elementor-6757\" data-elementor-post-type=\"page\">\n\t\t\t\t<div class=\"elementor-element elementor-element-557c5212 e-flex e-con-boxed e-con e-parent\" data-id=\"557c5212\" data-element_type=\"container\" data-settings=\"{&quot;background_background&quot;:&quot;video&quot;,&quot;background_video_link&quot;:&quot;https:\\\/\\\/www.weebit-nano.com\\\/wp-content\\\/uploads\\\/2022\\\/04\\\/Weebit_bg.webm&quot;}\">\n\t\t\t\t\t<div class=\"e-con-inner\">\n\t\t<div class=\"elementor-background-video-container elementor-hidden-mobile\" aria-hidden=\"true\">\n\t\t\t\t\t\t\t<video class=\"elementor-background-video-hosted\" autoplay muted playsinline loop><\/video>\n\t\t\t\t\t<\/div>\t\t<div class=\"elementor-element elementor-element-10ae6366 elementor-widget elementor-widget-heading\" data-id=\"10ae6366\" data-element_type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<div class=\"elementor-heading-title elementor-size-default\">Technology<\/div>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-5c3fb524 elementor-widget elementor-widget-heading\" data-id=\"5c3fb524\" data-element_type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<h1 class=\"elementor-heading-title elementor-size-default\">Meet the <strong>Weebit ReRAM Bitcell<\/strong><\/h1>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t<div class=\"elementor-element elementor-element-4747ad09 e-flex e-con-boxed e-con e-parent\" data-id=\"4747ad09\" data-element_type=\"container\">\n\t\t\t\t\t<div class=\"e-con-inner\">\n\t\t\t\t<div class=\"elementor-element elementor-element-1981382 elementor-widget elementor-widget-text-editor\" data-id=\"1981382\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<p>Weebit ReRAM (<a href=\"https:\/\/www.weebit-nano.com\/definition\/rram\/\" target=\"_blank\" rel=\"noopener\">Resistive Random-Access Memory<\/a>) addresses the growing need for higher-performance, more reliable, lower-power, and more cost-effective <a href=\"https:\/\/www.weebit-nano.com\/definition\/non-volatile-memory-nvm\/\" target=\"_blank\" rel=\"noopener\">non-volatile memory<\/a> (NVM) solutions in a broad range of electronic products.<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t<div class=\"elementor-element elementor-element-761586b e-flex e-con-boxed e-con e-child\" data-id=\"761586b\" data-element_type=\"container\">\n\t\t\t\t\t<div class=\"e-con-inner\">\n\t\t\t\t<div class=\"elementor-element elementor-element-92752b3 elementor-widget elementor-widget-image\" data-id=\"92752b3\" data-element_type=\"widget\" data-widget_type=\"image.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<img fetchpriority=\"high\" decoding=\"async\" width=\"800\" height=\"517\" src=\"https:\/\/www.weebit-nano.com\/wp-content\/uploads\/2022\/04\/ReRAM-cell.jpg\" class=\"attachment-large size-large wp-image-6962\" alt=\"\" srcset=\"https:\/\/www.weebit-nano.com\/wp-content\/uploads\/2022\/04\/ReRAM-cell.jpg 896w, https:\/\/www.weebit-nano.com\/wp-content\/uploads\/2022\/04\/ReRAM-cell-300x194.jpg 300w, https:\/\/www.weebit-nano.com\/wp-content\/uploads\/2022\/04\/ReRAM-cell-768x496.jpg 768w\" sizes=\"(max-width: 800px) 100vw, 800px\" \/>\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-e453585 elementor-widget__width-initial elementor-absolute elementor-invisible elementor-widget elementor-widget-image\" data-id=\"e453585\" data-element_type=\"widget\" data-settings=\"{&quot;_position&quot;:&quot;absolute&quot;,&quot;_animation&quot;:&quot;zoomInUp&quot;}\" data-widget_type=\"image.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<img decoding=\"async\" width=\"367\" height=\"367\" src=\"https:\/\/www.weebit-nano.com\/wp-content\/uploads\/2022\/04\/zoom.svg\" class=\"attachment-large size-large wp-image-7880\" alt=\"\" \/>\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-c34f153 elementor-widget elementor-widget-text-editor\" data-id=\"c34f153\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<p>At a basic level, ReRAM (also called <a href=\"https:\/\/www.weebit-nano.com\/investors\/guide-to-reram\/\" target=\"_blank\" rel=\"noopener\">RRAM<\/a>) is a memristor technology. Resistance can be programmed using electric voltage. The Weebit <a href=\"https:\/\/www.weebit-nano.com\/definition\/oxide\/\" target=\"_blank\" rel=\"noopener\">oxide<\/a>-based ReRAM (<a href=\"https:\/\/www.weebit-nano.com\/definition\/oxram\/\" target=\"_blank\" rel=\"noopener\">OxRAM<\/a>) cell is comprised of a thin oxide switching layer between two electrodes.<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t<div class=\"elementor-element elementor-element-f04e30d e-flex e-con-boxed e-con e-parent\" data-id=\"f04e30d\" data-element_type=\"container\" data-settings=\"{&quot;background_background&quot;:&quot;classic&quot;}\">\n\t\t\t\t\t<div class=\"e-con-inner\">\n\t\t<div class=\"elementor-element elementor-element-2d338f0 e-con-full e-flex e-con e-child\" data-id=\"2d338f0\" data-element_type=\"container\">\n\t\t\t\t<div class=\"elementor-element elementor-element-25f4a71 elementor-widget elementor-widget-heading\" data-id=\"25f4a71\" data-element_type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<h3 class=\"elementor-heading-title elementor-size-default\">How Weebit ReRAM Works<\/h3>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-d44ff20 elementor-widget elementor-widget-text-editor\" data-id=\"d44ff20\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<p>Immediately after it is manufactured, the memory cell is in a highly resistive state, meaning it will not allow current to flow between electrodes at standard voltage levels. At this point, the metal <a href=\"https:\/\/www.weebit-nano.com\/definition\/oxide\/\" target=\"_blank\" rel=\"noopener\">oxide<\/a> layer is insulated against electric current. A one-time \u2018forming\u2019 step is required to make it possible for the <a href=\"https:\/\/www.weebit-nano.com\/definition\/memory-cell\/\" target=\"_blank\" rel=\"noopener\">memory cell<\/a> to be used. In the forming step, a positive voltage is applied on the switching layer through its electrodes, creating the filament and changing the resistance of the oxide layer to a <a href=\"https:\/\/www.weebit-nano.com\/definition\/lrs-low-resistance-state\/\" target=\"_blank\" rel=\"noopener\">Low Resistive State<\/a> (LRS).<\/p><p>The level remains intact \u2013 maintaining the data \u2013 until the cell is purposefully reset by applying a negative voltage to break the filament, thus migrating to a <a href=\"https:\/\/www.weebit-nano.com\/definition\/hrs-high-resistance-state\/\" target=\"_blank\" rel=\"noopener\">High Resistive State<\/a> (HRS).<\/p><p>Applying positive and negative voltages can cause the cell to switch from one state to the other, encoding binary information by creating either a 1 (<a href=\"https:\/\/www.weebit-nano.com\/definition\/lrs-low-resistance-state\/\" target=\"_blank\" rel=\"noopener\">LRS<\/a>) or a 0 (<a href=\"https:\/\/www.weebit-nano.com\/definition\/hrs-high-resistance-state\/\" target=\"_blank\" rel=\"noopener\">HRS<\/a>) data bit stored in the memory cell. Once formed, the conductive filament can be broken, then reformed and broken again during successive cycles of erasing and programming the memory cell.<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t<div class=\"elementor-element elementor-element-4f76472 e-con-full e-flex e-con e-child\" data-id=\"4f76472\" data-element_type=\"container\">\n\t\t\t\t<div class=\"elementor-element elementor-element-4de69a4 elementor-widget elementor-widget-image\" data-id=\"4de69a4\" data-element_type=\"widget\" data-widget_type=\"image.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<img decoding=\"async\" width=\"901\" height=\"480\" src=\"https:\/\/www.weebit-nano.com\/wp-content\/uploads\/2022\/10\/how.svg\" class=\"attachment-full size-full wp-image-12558\" alt=\"\" \/>\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t<div class=\"elementor-element elementor-element-9578f74 e-flex e-con-boxed e-con e-parent\" data-id=\"9578f74\" data-element_type=\"container\" data-settings=\"{&quot;background_background&quot;:&quot;classic&quot;}\">\n\t\t\t\t\t<div class=\"e-con-inner\">\n\t\t<div class=\"elementor-element elementor-element-a440e34 e-con-full e-flex e-con e-child\" data-id=\"a440e34\" data-element_type=\"container\">\n\t\t\t\t<div class=\"elementor-element elementor-element-327d5a0 elementor-widget elementor-widget-heading\" data-id=\"327d5a0\" data-element_type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<h3 class=\"elementor-heading-title elementor-size-default\">Materials Matter<\/h3>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-54d1478 elementor-widget elementor-widget-text-editor\" data-id=\"54d1478\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<p>Thanks to its simple structure, a ReRAM cell is small, fast, easy to stack, and consumes extremely low power. One of the key industry challenges in <a href=\"https:\/\/www.weebit-nano.com\/definition\/reram-or-rram\/\" target=\"_blank\" rel=\"noopener\">ReRAM<\/a> (<a href=\"https:\/\/www.weebit-nano.com\/definition\/rram\/\">RRAM<\/a>) technology development to-date has been in choosing the appropriate resistive material that enables changes to its chemical or physical structure and is then able to restore that structure in a repeatable, low-variability and cost-effective manner. Our ReRAM technology \u2013 developed with our R&amp;D partner CEA-Leti \u2013 overcomes this challenge.<\/p><p>The material choices we\u2019ve made with Weebit ReRAM are a huge advantage. Weebit ReRAM is based on the most common materials used in fabs today, helping to make it extremely cost-effective and easy to integrate into any <a href=\"https:\/\/www.weebit-nano.com\/definition\/cmos\/\" target=\"_blank\" rel=\"noopener\">CMOS<\/a> manufacturing flow. In addition, our ReRAM doesn\u2019t require any rare earth materials, and it doesn\u2019t come with any risk of contamination. This sets Weebit ReRAM apart from most other types of emerging memory and contributes positively to our customers\u2019 environmental initiatives.<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t<div class=\"elementor-element elementor-element-1832c70 e-flex e-con-boxed e-con e-parent\" data-id=\"1832c70\" data-element_type=\"container\">\n\t\t\t\t\t<div class=\"e-con-inner\">\n\t\t\t\t<div class=\"elementor-element elementor-element-7242d1d elementor-widget elementor-widget-heading\" data-id=\"7242d1d\" data-element_type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<h3 class=\"elementor-heading-title elementor-size-default\">Learn More about Weebit\u2019s Ground-breaking ReRAM<\/h3>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t<div class=\"elementor-element elementor-element-a2f1739 e-flex e-con-boxed e-con e-child\" data-id=\"a2f1739\" data-element_type=\"container\">\n\t\t\t\t\t<div class=\"e-con-inner\">\n\t\t\t\t<div class=\"elementor-element elementor-element-78c0115 elementor-widget__width-initial res_box elementor-widget elementor-widget-uael-infobox\" data-id=\"78c0115\" data-element_type=\"widget\" data-widget_type=\"uael-infobox.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\n<div class=\"uael-module-content uael-infobox  uael-infobox-left  uael-infobox-link-type-button\">\n\t<div class=\"uael-infobox-left-right-wrap\">\n\t\t\t\t\t\t<div class=\"uael-infobox-content\">\n\t\t\t\t\t\t<div class='uael-infobox-title-wrap'><h6 class=\"uael-infobox-title-prefix elementor-inline-editing\" data-elementor-setting-key=\"infobox_title_prefix\" data-elementor-inline-editing-toolbar=\"basic\" >Resource<\/h6><h3 class=\"uael-infobox-title elementor-inline-editing\" data-elementor-setting-key=\"infobox_title\" data-elementor-inline-editing-toolbar=\"basic\" >Weebit scaling down its ReRAM technology to 22nm<\/h3><\/div>\t\t\t\t\t\t\t\t\t<div class=\"uael-infobox-text-wrap\">\n\t\t\t\t<div class=\"uael-infobox-text elementor-inline-editing\" data-elementor-setting-key=\"infobox_description\" data-elementor-inline-editing-toolbar=\"advanced\">\n\t\t\t\t\tWeebit is scaling its embedded ReRAM technology down to 22nm \u2013 one of the\nindustry\u2019s most common process nodes. \t\t\t\t<\/div>\n\t\t\t\t\t\n\t\t\t\t\t\t\t<div class=\"uael-button-wrapper elementor-widget-button\">\n\t\t\t\t<a href=\"\/press_release\/weebit-scaling-down-its-reram-technology-to-22nm\/\" target=\"_blank\" class=\"elementor-button-link  elementor-button elementor-size-sm\">\n\t\t\t\t\t\t\t<span class=\"elementor-button-content-wrapper\">\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<span class=\"elementor-align-icon-right elementor-button-icon\">\n\t\t\t\t\t\t\t\t\t\t\t<\/span>\n\t\t\t\t\t\t\t\n\t\t\t<span class=\"elementor-button-text elementor-inline-editing\"  data-elementor-setting-key=\"infobox_button_text\" data-elementor-inline-editing-toolbar=\"none\">Read More<\/span>\n\t\t<\/span>\n\t\t\t\t\t\t<\/a>\n\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t<\/div>\n<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-4501b73 elementor-widget__width-initial res_box elementor-widget elementor-widget-uael-infobox\" data-id=\"4501b73\" data-element_type=\"widget\" data-widget_type=\"uael-infobox.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\n<div class=\"uael-module-content uael-infobox  uael-infobox-left  uael-infobox-link-type-button\">\n\t<div class=\"uael-infobox-left-right-wrap\">\n\t\t\t\t\t\t<div class=\"uael-infobox-content\">\n\t\t\t\t\t\t<div class='uael-infobox-title-wrap'><h6 class=\"uael-infobox-title-prefix elementor-inline-editing\" data-elementor-setting-key=\"infobox_title_prefix\" data-elementor-inline-editing-toolbar=\"basic\" >Resource<\/h6><h3 class=\"uael-infobox-title elementor-inline-editing\" data-elementor-setting-key=\"infobox_title\" data-elementor-inline-editing-toolbar=\"basic\" >Dual-configuration in-memory computing bitcells using Weebit RRAM for BNNs<\/h3><\/div>\t\t\t\t\t\t\t\t\t<div class=\"uael-infobox-text-wrap\">\n\t\t\t\t<div class=\"uael-infobox-text elementor-inline-editing\" data-elementor-setting-key=\"infobox_description\" data-elementor-inline-editing-toolbar=\"advanced\">\n\t\t\t\t\tDetailing the functionality and trade-offs of using ReRAM to implement deep neural networks for edge AI \u2013 (Applied Physics Letters; with CEA-Leti and IIT-Delhi)\t\t\t\t<\/div>\n\t\t\t\t\t\n\t\t\t\t\t\t\t<div class=\"uael-button-wrapper elementor-widget-button\">\n\t\t\t\t<a href=\"\/wp-content\/uploads\/2022\/01\/APL_Weebit-Nano_Dual-Configuration-in-Memory-Bitcells_ReRAM.pdf\" target=\"_blank\" class=\"elementor-button-link  elementor-button elementor-size-sm\">\n\t\t\t\t\t\t\t<span class=\"elementor-button-content-wrapper\">\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<span class=\"elementor-align-icon-right elementor-button-icon\">\n\t\t\t\t\t\t\t\t\t\t\t<\/span>\n\t\t\t\t\t\t\t\n\t\t\t<span class=\"elementor-button-text elementor-inline-editing\"  data-elementor-setting-key=\"infobox_button_text\" data-elementor-inline-editing-toolbar=\"none\">Download<\/span>\n\t\t<\/span>\n\t\t\t\t\t\t<\/a>\n\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t<\/div>\n<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t","protected":false},"excerpt":{"rendered":"<p>Technology Meet the Weebit ReRAM Bitcell Weebit ReRAM (Resistive Random-Access Memory) addresses the growing need for higher-performance, more reliable, lower-power, and more cost-effective non-volatile memory (NVM) solutions in a broad range of electronic products. At a basic level, ReRAM (also called RRAM) is a memristor technology. Resistance can be programmed using electric voltage. The Weebit [&hellip;]<\/p>\n","protected":false},"author":7,"featured_media":0,"parent":5021,"menu_order":3,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_acf_changed":false,"footnotes":"","_links_to":"","_links_to_target":""},"class_list":["post-6757","page","type-page","status-publish","hentry"],"acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v26.1 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>Weebit ReRAM Bitcell | Technology | Weebit<\/title>\n<meta name=\"description\" content=\"Thanks to its simple structure, a ReRAM (or embedded RRAM) cell is small, fast, and easy to stack. It also consumes extremely low power. Learn more here\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.weebit-nano.com\/technology\/reram-bitcell\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Weebit ReRAM Bitcell | Technology | Weebit\" \/>\n<meta property=\"og:description\" content=\"Thanks to its simple structure, a ReRAM (or embedded RRAM) cell is small, fast, and easy to stack. It also consumes extremely low power. 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